Transversely-excited film bulk acoustic resonator with multiple diaphragm thicknesses and fabrication method

ABSTRACT

Filter devices and methods are disclosed. A filter device includes a substrate and a piezoelectric plate attached to the substrate, the piezoelectric plate forming diaphragms spanning respective cavities in the substrate. A first portion of the piezoelectric plate has a first thickness. A front surface of a second portion of the piezoelectric plate is recessed relative to a front surface of the first portion of the piezoelectric plate such that the second portion of the piezoelectric plate has a second thickness less than the first thickness. A conductor pattern is formed on the front surfaces of the first and second portions of the piezoelectric plate. The conductor pattern includes a first interdigital transducer (IDT) with interleaved fingers on a diaphragm having the first thickness, and a second IDT with interleaved fingers on a diaphragm having the second thickness.

RELATED APPLICATION INFORMATION

This application is a continuation of application Ser. No. 16/988,213,filed Aug. 7, 2020, entitled TRANSVERSELY-EXCITED FILM BULK ACOUSTICRESONATOR WITH MULTIPLE DIAPHRAGM THICKNESSES AND FABRICATION METHOD,which claims priority to the following provisional patent applications:application 62/892,980, titled XBAR FABRICATION, filed Aug. 28, 2019;and application 62/904,152, titled DIELECTRIC OVELAYER TRIMMING FORFREQUENCY CONTROL, filed Sep. 23, 2019.

Application Ser. No. 16/988,213 is a continuation in part of applicationSer. No. 16/438,121, filed Jun. 11, 2019, entitled TRANSVERSELY-EXCITEDFILM BULK ACOUSTIC RESONATOR, now U.S. Pat. No. 10,756,697, which is acontinuation-in-part of application Ser. No. 16/230,443, filed Dec. 21,2018, entitled TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATOR, nowU.S. Pat. No. 10,491,192, which claims priority from the followingprovisional patent applications: application 62/685,825, filed Jun. 15,2018, entitled SHEAR-MODE FBAR (XBAR); application 62/701,363, filedJul. 20, 2018, entitled SHEAR-MODE FBAR (XBAR); application 62/741,702,filed Oct. 5, 2018, entitled 5 GHZ LATERALLY-EXCITED BULK WAVE RESONATOR(XBAR); application 62/748,883, filed Oct. 22, 2018, entitled SHEAR-MODEFILM BULK ACOUSTIC RESONATOR; and application 62/753,815, filed Oct. 31,2018, entitled LITHIUM TANTALATE SHEAR-MODE FILM BULK ACOUSTICRESONATOR. All of these applications are incorporated herein byreference.

NOTICE OF COPYRIGHTS AND TRADE DRESS

A portion of the disclosure of this patent document contains materialwhich is subject to copyright protection. This patent document may showand/or describe matter which is or may become trade dress of the owner.The copyright and trade dress owner has no objection to the facsimilereproduction by anyone of the patent disclosure as it appears in thePatent and Trademark Office patent files or records, but otherwisereserves all copyright and trade dress rights whatsoever.

BACKGROUND Field

This disclosure relates to radio frequency filters using acoustic waveresonators, and specifically to filters for use in communicationsequipment.

Description of the Related Art

A radio frequency (RF) filter is a two-port device configured to passsome frequencies and to stop other frequencies, where “pass” meanstransmit with relatively low signal loss and “stop” means block orsubstantially attenuate. The range of frequencies passed by a filter isreferred to as the “pass-band” of the filter. The range of frequenciesstopped by such a filter is referred to as the “stop-band” of thefilter. A typical RF filter has at least one pass-band and at least onestop-band. Specific requirements on a pass-band or stop-band depend onthe specific application. For example, a “pass-band” may be defined as afrequency range where the insertion loss of a filter is better than adefined value such as 1 dB, 2 dB, or 3 dB. A “stop-band” may be definedas a frequency range where the rejection of a filter is greater than adefined value such as 20 dB, 30 dB, 40 dB, or greater depending onapplication.

RF filters are used in communications systems where information istransmitted over wireless links. For example, RF filters may be found inthe RF front-ends of cellular base stations, mobile telephone andcomputing devices, satellite transceivers and ground stations, IoT(Internet of Things) devices, laptop computers and tablets, fixed pointradio links, and other communications systems. RF filters are also usedin radar and electronic and information warfare systems.

RF filters typically require many design trade-offs to achieve, for eachspecific application, the best compromise between performance parameterssuch as insertion loss, rejection, isolation, power handling, linearity,size and cost. Specific design and manufacturing methods andenhancements can benefit simultaneously one or several of theserequirements.

Performance enhancements to the RF filters in a wireless system can havebroad impact to system performance. Improvements in RF filters can beleveraged to provide system performance improvements such as larger cellsize, longer battery life, higher data rates, greater network capacity,lower cost, enhanced security, higher reliability, etc. Theseimprovements can be realized at many levels of the wireless system bothseparately and in combination, for example at the RF module, RFtransceiver, mobile or fixed sub-system, or network levels.

The desire for wider communication channel bandwidths will inevitablylead to the use of higher frequency communications bands. The currentLTE™ (Long Term Evolution) specification defines frequency bands from3.3 GHz to 5.9 GHz. These bands are not presently used. Future proposalsfor wireless communications include millimeter wave communication bandswith frequencies up to 28 GHz.

High performance RF filters for present communication systems commonlyincorporate acoustic wave resonators including surface acoustic wave(SAW) resonators, bulk acoustic wave (BAW) resonators, film bulkacoustic wave resonators (FBAR), and other types of acoustic resonators.However, these existing technologies are not well-suited for use at thehigher frequencies proposed for future communications networks.

DESCRIPTION OF THE DRAWINGS

FIG. 1 includes a schematic plan view and two schematic cross-sectionalviews of a transversely-excited film bulk acoustic resonator (XBAR).

FIG. 2 is an expanded schematic cross-sectional view of a portion of theXBAR of FIG. 1.

FIG. 3 is an alternative schematic cross-sectional view of the XBAR ofFIG. 1.

FIG. 4 is a graphic illustrating a shear acoustic mode in an XBAR.

FIG. 5 is a schematic block diagram of a bandpass filter incorporatingseven XBARs.

FIG. 6A is a schematic cross-sectional view of a filter with adielectric layer to set a frequency separation between shunt resonatorsand series resonators.

FIG. 6B is a schematic cross-sectional view of a filter with differentpiezoelectric diaphragm thicknesses to set a frequency separationbetween shunt resonators and series resonators.

FIG. 7 is a series of schematic cross-section views illustrating aprocess to control the thickness of a piezoelectric diaphragm.

FIG. 8 is a flow chart of a process for fabricating a filter implementedwith XBARs.

FIG. 9 is a flow chart of another process for fabricating a filterimplemented with XBARs.

FIG. 10 is a flow chart of another process for fabricating a filterimplemented with

XBARs.

FIG. 11 is a flow chart of another process for fabricating a filterimplemented with XBARs.

Throughout this description, elements appearing in figures are assignedthree-digit or four-digit reference designators, where the two leastsignificant digits are specific to the element and the one or two mostsignificant digit is the figure number where the element is firstintroduced. An element that is not described in conjunction with afigure may be presumed to have the same characteristics and function asa previously-described element having the same reference designator.

DETAILED DESCRIPTION Description of Apparatus

FIG. 1 shows a simplified schematic top view and orthogonalcross-sectional views of a transversely-excited film bulk acousticresonator (XBAR) 100. XBAR resonators such as the resonator 100 may beused in a variety of RF filters including band-reject filters, band-passfilters, duplexers, and multiplexers. XBARs are particularly suited foruse in filters for communications bands with frequencies above 3 GHz.

The XBAR 100 is made up of a thin film conductor pattern formed on asurface of a piezoelectric plate 110 having parallel front and backsurfaces 112, 114, respectively. The piezoelectric plate is a thinsingle-crystal layer of a piezoelectric material such as lithiumniobate, lithium tantalate, lanthanum gallium silicate, gallium nitride,or aluminum nitride. The piezoelectric plate is cut such that theorientation of the X, Y, and Z crystalline axes with respect to thefront and back surfaces is known and consistent. In the examplespresented in this patent, the piezoelectric plates are Z-cut, which isto say the Z axis is normal to the surfaces. However, XBARs may befabricated on piezoelectric plates with other crystallographicorientations.

The back surface 114 of the piezoelectric plate 110 is attached to asubstrate 120 that provides mechanical support to the piezoelectricplate 110. The substrate 120 may be, for example, silicon, sapphire,quartz, or some other material. The piezoelectric plate 110 may bebonded to the substrate 120 using a wafer bonding process, or grown onthe substrate 120, or attached to the substrate in some other manner.The piezoelectric plate may be attached directly to the substrate, ormay be attached to the substrate via one or more intermediate materiallayers.

The conductor pattern of the XBAR 100 includes an interdigitaltransducer (IDT) 130. The IDT 130 includes a first plurality of parallelfingers, such as finger 136, extending from a first busbar 132 and asecond plurality of fingers extending from a second busbar 134. Thefirst and second pluralities of parallel fingers are interleaved. Theinterleaved fingers overlap for a distance AP, commonly referred to asthe “aperture” of the IDT. The center-to-center distance L between theoutermost fingers of the IDT 130 is the “length” of the IDT.

The first and second busbars 132, 134 serve as the terminals of the XBAR100. A radio frequency or microwave signal applied between the twobusbars 132, 134 of the IDT 130 excites an acoustic wave within thepiezoelectric plate 110. As will be discussed in further detail, theexcited acoustic wave is a bulk shear wave that propagates in thedirection normal to the surface of the piezoelectric plate 110, which isalso normal, or transverse, to the direction of the electric fieldcreated by the IDT fingers. Thus, the XBAR is considered atransversely-excited film bulk wave resonator.

A cavity 140 is formed in the substrate 120 such that a portion 115 ofthe piezoelectric plate 110 containing the IDT 130 is suspended over thecavity 140 without contacting the substrate 120. “Cavity” has itsconventional meaning of “an empty space within a solid body.” The cavity140 may be a hole completely through the substrate 120 (as shown inSection A-A and Section B-B) or a recess in the substrate 120 (as shownsubsequently in FIG. 3). The cavity 140 may be formed, for example, byselective etching of the substrate 120 before or after the piezoelectricplate 110 and the substrate 120 are attached. As shown in FIG. 1, thecavity 140 has a rectangular shape with an extent greater than theaperture AP and length L of the IDT 130. A cavity of an XBAR may have adifferent shape, such as a regular or irregular polygon. The cavity ofan XBAR may more or fewer than four sides, which may be straight orcurved.

The portion 115 of the piezoelectric plate suspended over the cavity 140will be referred to herein as the “diaphragm” (for lack of a betterterm) due to its physical resemblance to the diaphragm of a microphone.The diaphragm may be continuously and seamlessly connected to the restof the piezoelectric plate 110 around all, or nearly all, of perimeterof the cavity 140.

For ease of presentation in FIG. 1, the geometric pitch and width of theIDT fingers is greatly exaggerated with respect to the length (dimensionL) and aperture (dimension AP) of the XBAR. A typical XBAR has more thanten parallel fingers in the IDT 110. An XBAR may have hundreds, possiblythousands, of parallel fingers in the IDT 110. Similarly, the thicknessof the fingers in the cross-sectional views is greatly exaggerated.

FIG. 2 shows a detailed schematic cross-sectional view of the XBAR 100of FIG. 1. The piezoelectric plate 110 is a single-crystal layer ofpiezoelectrical material having a thickness ts. ts may be, for example,100 nm to 1500 nm. When used in filters for LTE™ bands from 3.4 GHZ to 6GHz (e.g. bands 42, 43, 46), the thickness ts may be, for example, 200nm to 1000 nm.

A front-side dielectric layer 214 may optionally be formed on the frontside of the piezoelectric plate 110. The “front side” of the XBAR is, bydefinition, the surface facing away from the substrate. The front-sidedielectric layer 214 has a thickness tfd. The front-side dielectriclayer 214 is formed between the IDT fingers 238. Although not shown inFIG. 2, the front side dielectric layer 214 may also be deposited overthe IDT fingers 238. A back-side dielectric layer 216 may optionally beformed on the back side of the piezoelectric plate 110. The back-sidedielectric layer 216 has a thickness tbd. The front-side and back-sidedielectric layers 214, 216 may be a non-piezoelectric dielectricmaterial, such as silicon dioxide or silicon nitride. tfd and tbd maybe, for example, 0 to 500 nm. tfd and tbd are typically less than thethickness is of the piezoelectric plate. tfd and tbd are not necessarilyequal, and the front-side and back-side dielectric layers 214, 216 arenot necessarily the same material. Either or both of the front-side andback-side dielectric layers 214, 216 may be formed of multiple layers oftwo or more materials.

The IDT fingers 238 may be aluminum or a substantially aluminum alloy,copper or a substantially copper alloy, beryllium, gold, or some otherconductive material. Thin (relative to the total thickness of theconductors) layers of other metals, such as chromium or titanium, may beformed under and/or over the fingers to improve adhesion between thefingers and the piezoelectric plate 110 and/or to passivate orencapsulate the fingers. The busbars (132, 134 in FIG. 1) of the IDT maybe made of the same or different materials as the fingers.

Dimension p is the center-to-center spacing or “pitch” of the IDTfingers, which may be referred to as the pitch of the IDT and/or thepitch of the XBAR. Dimension w is the width or “mark” of the IDTfingers. The IDT of an XBAR differs substantially from the IDTs used insurface acoustic wave (SAW) resonators. In a SAW resonator, the pitch ofthe IDT is one-half of the acoustic wavelength at the resonancefrequency. Additionally, the mark-to-pitch ratio of a SAW resonator IDTis typically close to 0.5 (i.e. the mark or finger width is aboutone-fourth of the acoustic wavelength at resonance). In an XBAR, thepitch p of the IDT is typically 2 to 20 times the width w of thefingers. In addition, the pitch p of the IDT is typically 2 to 20 timesthe thickness is of the piezoelectric slab 212. The width of the IDTfingers in an XBAR is not constrained to one-fourth of the acousticwavelength at resonance. For example, the width of XBAR IDT fingers maybe 500 nm or greater, such that the IDT can be fabricated using opticallithography. The thickness tm of the IDT fingers may be from 100 nm toabout equal to the width w. The thickness of the busbars (132, 134 inFIG. 1) of the IDT may be the same as, or greater than, the thickness tmof the IDT fingers.

FIG. 3 is an alternative cross-sectional view along the section planeA-A defined in FIG. 1. In FIG. 3, a piezoelectric plate 310 is attachedto a substrate 320. An optional dielectric layer 322 may be sandwichedbetween the piezoelectric plate 310 and the substrate 320. A cavity 340,which does not fully penetrate the substrate 320, is formed in thesubstrate under the portion of the piezoelectric plate 310 containingthe IDT of an XBAR. The cavity 340 may be formed, for example, byetching the substrate 320 before attaching the piezoelectric plate 310.Alternatively, the cavity 340 may be formed by etching the substrate 320with a selective etchant that reaches the substrate through one or moreopenings 342 provided in the piezoelectric plate 310.

The XBAR 300 shown in FIG. 3 will be referred to herein as a “front-sideetch” configuration since the cavity 340 is etched from the front sideof the substrate 320 (before or after attaching the piezoelectric plate310). The XBAR 100 of FIG. 1 will be referred to herein as a “back-sideetch” configuration since the cavity 140 is etched from the back side ofthe substrate 120 after attaching the piezoelectric plate 110.

FIG. 4 is a graphical illustration of the primary acoustic mode ofinterest in an XBAR. FIG. 4 shows a small portion of an XBAR 400including a piezoelectric plate 410 and three interleaved IDT fingers430. An RF voltage is applied to the interleaved fingers 430. Thisvoltage creates a time-varying electric field between the fingers. Thedirection of the electric field is lateral, or parallel to the surfaceof the piezoelectric plate 410, as indicated by the arrows labeled“electric field”. Due to the high dielectric constant of thepiezoelectric plate, the electric field is highly concentrated in theplate relative to the air. The lateral electric field introduces sheardeformation, and thus strongly excites a shear-mode acoustic mode, inthe piezoelectric plate 410. In this context, “shear deformation” isdefined as deformation in which parallel planes in a material remainparallel and maintain a constant distance while translating relative toeach other. A “shear acoustic mode” is defined as an acoustic vibrationmode in a medium that results in shear deformation of the medium. Theshear deformations in the XBAR 400 are represented by the curves 460,with the adjacent small arrows providing a schematic indication of thedirection and magnitude of atomic motion. The degree of atomic motion,as well as the thickness of the piezoelectric plate 410, have beengreatly exaggerated for ease of visualization. While the atomic motionsare predominantly lateral (i.e. horizontal as shown in FIG. 4), thedirection of acoustic energy flow of the excited primary shear acousticmode is substantially orthogonal to the surface of the piezoelectricplate, as indicated by the arrow 465.

Considering FIG. 4, there is essentially no electric field immediatelyunder the IDT fingers 430, and thus acoustic modes are only minimallyexcited in the regions 470 under the fingers. There may be evanescentacoustic motions in these regions. Since acoustic vibrations are notexcited under the IDT fingers 430, the acoustic energy coupled to theIDT fingers 430 is low (for example compared to the fingers of an IDT ina SAW resonator), which minimizes viscous losses in the IDT fingers.

An acoustic resonator based on shear acoustic wave resonances canachieve better performance than current state-of-the artfilm-bulk-acoustic-resonators (FBAR) and solidly-mounted-resonatorbulk-acoustic-wave (SMR BAW) devices where the electric field is appliedin the thickness direction. In such devices, the acoustic mode iscompressive with atomic motions and the direction of acoustic energyflow in the thickness direction. In addition, the piezoelectric couplingfor shear wave XBAR resonances can be high (>20%) compared to otheracoustic resonators. Thus high piezoelectric coupling enables the designand implementation of microwave and millimeter-wave filters withappreciable bandwidth.

FIG. 5 is a schematic circuit diagram for a high frequency band-passfilter 500 using XBARs. The filter 500 has a conventional ladder filterarchitecture including four series resonators 510A, 510B, 510C, 510D andthree shunt resonators 520A, 520B, 520C. The four series resonators510A, 510B, 510C, and 510D are connected in series between a first portand a second port. In FIG. 5, the first and second ports are labeled“In” and “Out”, respectively. However, the filter 500 is symmetrical andeither port and serve as the input or output of the filter. The threeshunt resonators 520A, 520B, 520C are connected from nodes between theseries resonators to ground. All the shunt resonators and seriesresonators are XBARs. Although not shown in FIG. 5, any and all of theresonators may be divided into multiple sub-resonators electricallyconnected in parallel. Each sub-resonator may have a respectivediaphragm.

The filter 500 may include a substrate having a surface, asingle-crystal piezoelectric plate having parallel front and backsurfaces, and an acoustic Bragg reflector sandwiched between the surfaceof the substrate and the back surface of the single-crystalpiezoelectric plate. The substrate, acoustic Bragg reflector, andpiezoelectric plate are represented by the rectangle 510 in FIG. 5. Aconductor pattern formed on the front surface of the single-crystalpiezoelectric plate includes interdigital transducers (IDTs) for each ofthe four series resonators 510A, 510B, 510C, 510D and three shuntresonators 520A, 520B, 520C. All of the IDTs are configured to exciteshear acoustic waves in the single-crystal piezoelectric plate inresponse to respective radio frequency signals applied to each IDT.

In a ladder filter, such as the filter 500, the resonance frequencies ofshunt resonators are typically lower than the resonance frequencies ofseries resonators. The resonance frequency of an SM XBAR resonator isdetermined, in part, by IDT pitch. IDT pitch also impacts other filterparameters including impedance and power handling capability. Forbroad-band filter applications, it may not be practical to provide therequired difference between the resonance frequencies of shunt andseries resonators using only differences in IDT pitch.

As described in U.S. Pat. No. 10,601,392, a first dielectric layer(represented by the dashed rectangle 525) having a first thickness t1may be deposited over the IDTs of some or all of the shunt resonators520A, 520B, 520C. A second dielectric layer (represented by the dashedrectangle 515) having a second thickness t2, less than t1, may bedeposited over the IDTs of the series resonators 510A, 510B, 510C, 510D.The second dielectric layer may be deposited over both the shunt andseries resonators. The difference between the thickness t1 and thethickness t2 defines a frequency offset between the series and shuntresonators. Individual series or shunt resonators may be tuned todifferent frequencies by varying the pitch of the respective IDTs. Insome filters, more than two dielectric layers of different thicknessesmay be used as described in co-pending application Ser. No. 16/924,108.

Alternatively or additionally, the shunt resonators 510A, 510B, 510C,510D may be formed on a piezoelectric plate having a thickness t3 andthe series resonators may be fabricated on a piezoelectric plate havinga thickness t4 less than t3. The difference between the thicknesses t3and t4 defines a frequency offset between the series and shuntresonators. Individual series or shunt resonators may be tuned todifferent frequencies by varying the pitch of the respective IDTs. Insome filters, three or more different piezoelectric plate thicknessesmay be used to provide additional frequency tuning capability.

FIG. 6A is a schematic cross-sectional view though a shunt resonator anda series resonator of a filter 600A that uses dielectric thickness toseparate the frequencies of shunt and series resonators. A piezoelectricplate 610A is attached to a substrate 620. Portions of the piezoelectricplate form diaphragms spanning cavities 640 in the substrate 620.Interleaved IDT fingers, such as finger 630, are formed on thediaphragms. A first dielectric layer 650, having a thickness t1, isformed over the IDT of the shunt resonator. A second dielectric layer655, having a thickness t2, is deposited over both the shunt and seriesresonator. Alternatively, a single dielectric layer having thicknesst1+t2 may be deposited over both the shunt and series resonators. Thedielectric layer over the series resonator may then be thinned tothickness t2 using a masked dry etching process. In either case, thedifference between the overall thickness of the dielectric layers (0+t2)over the shunt resonator and the thickness t2 of the second dielectriclayer defines a frequency offset between the series and shuntresonators.

The second dielectric layer 655 may also serve to seal and passivate thesurface of the filter 600A. The second dielectric layer may be the samematerial as the first dielectric layer or a different material. Thesecond dielectric layer may be a laminate of two or more sub-layers ofdifferent materials. Alternatively, an additional dielectric passivationlayer (not shown in FIG. 6A) may be formed over the surface of thefilter 600A. Further, as will be described subsequently, the thicknessof the final dielectric layer (i.e. either the second dielectric layer655 or an additional dielectric layer) may be locally adjusted tofine-tune the frequency of the filter 600A. Thus the final dielectriclayer can be referred to as the “passivation and tuning layer”.

FIG. 6B is a schematic cross-sectional view though a shunt resonator anda series resonator of a filter 600B that uses piezoelectric platethickness to separate the frequencies of shunt and series resonators. Apiezoelectric plate 610B is attached to a substrate 620. Portions of thepiezoelectric plate form diaphragms spanning cavities 640 in thesubstrate 620. Interleaved IDT fingers, such as finger 630, are formedon the diaphragms. The diaphragm of the shunt resonator has a thicknesst3. The piezoelectric plate 610B is selectively thinned such that thediaphragm of the series resonator has a thickness t4, which is less thant3. The difference between t3 and t4 defines a frequency offset betweenthe series and shunt resonators. A passivation and tuning layer 655 isdeposited over both the shunt and series resonators.

A back surface 614 of the piezoelectric plate 610B is also the backsurface of the diaphragms spanning the cavities 640. A front surface 665of a portion 660 of the piezoelectric plate 610B is recessed withrespect to a front surface 612 of the piezoelectric plate 610B, which isalso the front surface of the diaphragm of the shunt resonator. Therecessed portion 660 of the piezoelectric plate has a thickness t4 whichis less than the thickness t3 of the piezoelectric plate 610B. Therecessed portion 660 of the piezoelectric plate includes the diaphragmof the series resonator.

Description of Methods

FIG. 7 is a series of schematic cross-section views illustrating aprocess to control the thickness of a piezoelectric diaphragm. View Ashows a piezoelectric plate 710 with non-uniform thickness bonded to asubstrate 720. The piezoelectric plate 710 may be, for example, lithiumniobate or lithium tantalate. The substrate 720 may be a silicon waferor some other material as previously described. The illustratedthickness variation in the piezoelectric plate 710 is greatlyexaggerated. The thickness variation should not exceed 10% of thepiezoelectric plate thickness and may be a few percent or smaller.

View B illustrates an optical measurement of the piezoelectric platethickness using an optical thickness measurement tool 730 including alight source 732 and a detector 734. The optical thickness measurementtool 730 may be, for example, an ellipsometer/reflectometer. The opticalthickness measurement tool 730 measures light reflected from the surfaceof the piezoelectric plate 710 and from the interface between thepiezoelectric plate 710 and the substrate 720. The reflections from aparticular measurement point on the piezoelectric plate may be measuredusing multiple light wavelengths, incidence angles, and/or polarizationstates. The results of multiple measurements are processed to determinethe thickness of the piezoelectric plate at the measurement point.

The measurement process is repeated to determine the thickness of thepiezoelectric plate at multiple measurement points on the surface of thepiezoelectric plate. The multiple points may, for example, form a gridor matrix of measurement points on the surface of the plate. Themeasurement data can be processed and interpolated to provide a map ofthe thickness of the piezoelectric plate.

View C illustrates the removal of excess material from the piezoelectricplate using a material removal tool. In this context, “excess material”is defined as portions of the piezoelectric plate that extend beyond atarget plate thickness. The excess material to be removed is shaded inview C. The material removal tool may be, for example, a scanning ionmill 740, a tool employing Fluorine-based reactive ion etching, or someother tool. The scanning ion mill 740 scans a beam 745 of high energyions over the surface of the piezoelectric. The incidence of the ionbeam 745 on the piezoelectric plate removes material at the surface bysublimation or sputtering. The ion beam 745 may be scanned over thesurface of the piezoelectric plate one or more times in a rasterpattern. The ion current or the dwell time of the ion beam 745 may bevaried during the raster scan to control the depth of material removedfrom each point on the piezoelectric plate in accordance with the map ofthe thickness of the piezoelectric plate. The result is a piezoelectricplate with substantially improved thickness uniformity as shown in viewD. The thickness at any point on the piezoelectric plate may besubstantially equal to the target plate thickness, where “substantiallyequal” means equal to the extent possible as limited by the accuracy ofthe measurement and the capabilities of the material removal tools.

View E illustrates selective removal to thin selected portions of thepiezoelectric plate. Selected portions of the piezoelectric plate may bethinned, for example, to provide diaphragms for series resonators aspreviously shown in FIG. 5B. Selected portions of the piezoelectricplate may be thinned using the scanning ion mill or other scanningmaterial removal tool if the tool has sufficient spatial resolution todistinguish the areas of the piezoelectric plate to be thinned.Alternatively, a scanning or non-scanning material removal tool 750 oran etching process may be used to remove material from portions of thesurface of the piezoelectric plate defined by a mask 752. The result isa piezoelectric plate with reduced thickness regions 760 suitable forthe diaphragms of series resonators, as shown in view F.

FIG. 8 is a simplified flow chart showing a process 800 for fabricatinga filter device incorporating XBARs. Specifically, the process 800 isfor fabricating a filter device using a frequency setting dielectriclayer over shunt resonators as shown in FIG. 7A. The process 800 startsat 805 with a device substrate and a thin plate of piezoelectricmaterial disposed on a sacrificial substrate. The process 800 ends at895 with a completed filter device. The flow chart of FIG. 8 includesonly major process steps. Various conventional process steps (e.g.surface preparation, cleaning, inspection, baking, annealing,monitoring, testing, etc.) may be performed before, between, after, andduring the steps shown in FIG. 8.

While FIG. 8 generally describes a process for fabricating a singlefilter device, multiple filter devices may be fabricated simultaneouslyon a common wafer (consisting of a piezoelectric plate bonded to asubstrate). In this case, each step of the process 800 may be performedconcurrently on all of the filter devices on the wafer.

The flow chart of FIG. 8 captures three variations of the process 800for making an XBAR which differ in when and how cavities are formed inthe device substrate. The cavities may be formed at steps 810A, 810B, or810C. Only one of these steps is performed in each of the threevariations of the process 800.

The piezoelectric plate may be, for example, lithium niobate or lithiumtantalate, either of which may be Z-cut, rotated Z-cut, or rotatedYX-cut. The piezoelectric plate may be some other material and/or someother cut. The device substrate may preferably be silicon. The devicesubstrate may be some other material that allows formation of deepcavities by etching or other processing.

In one variation of the process 800, one or more cavities are formed inthe device substrate at 810A, before the piezoelectric plate is bondedto the substrate at 815. A separate cavity may be formed for eachresonator in a filter device. The one or more cavities may be formedusing conventional photolithographic and etching techniques. Typically,the cavities formed at 810A will not penetrate through the devicesubstrate, and the resulting resonator devices will have a cross-sectionas shown in FIG. 3.

At 815, the piezoelectric plate is bonded to the device substrate. Thepiezoelectric plate and the device substrate may be bonded by a waferbonding process. Typically, the mating surfaces of the device substrateand the piezoelectric plate are highly polished. One or more layers ofintermediate materials, such as an oxide or metal, may be formed ordeposited on the mating surface of one or both of the piezoelectricplate and the device substrate. One or both mating surfaces may beactivated using, for example, a plasma process. The mating surfaces maythen be pressed together with considerable force to establish molecularbonds between the piezoelectric plate and the device substrate orintermediate material layers.

At 820, the sacrificial substrate may be removed. For example, thepiezoelectric plate and the sacrificial substrate may be a wafer ofpiezoelectric material that has been ion implanted to create defects inthe crystal structure along a plane that defines a boundary between whatwill become the piezoelectric plate and the sacrificial substrate. At820, the wafer may be split along the defect plane, for example bythermal shock, detaching the sacrificial substrate and leaving thepiezoelectric plate bonded to the device substrate. The exposed surfaceof the piezoelectric plate may be polished or processed in some mannerafter the sacrificial substrate is detached.

Thin plates of single-crystal piezoelectric materials laminated to anon-piezoelectric substrate are commercially available. At the time ofthis application, both lithium niobate and lithium tantalate plates areavailable bonded to various substrates including silicon, quartz, andfused silica. Thin plates of other piezoelectric materials may beavailable now or in the future. The thickness of the piezoelectric platemay be between 300 nm and 1000 nm. When the substrate is silicon, alayer of SiO₂ may be disposed between the piezoelectric plate and thesubstrate. When a commercially available piezoelectric plate/devicesubstrate laminate is used, steps 810A, 815, and 820 of the process 800are not performed.

A first conductor pattern, including IDTs of each XBAR, is formed at 845by depositing and patterning one or more conductor layers on the frontside of the piezoelectric plate. The conductor layer may be, forexample, aluminum, an aluminum alloy, copper, a copper alloy, or someother conductive metal. Optionally, one or more layers of othermaterials may be disposed below (i.e. between the conductor layer andthe piezoelectric plate) and/or on top of the conductor layer. Forexample, a thin film of titanium, chrome, or other metal may be used toimprove the adhesion between the conductor layer and the piezoelectricplate. A second conductor pattern of gold, aluminum, copper or otherhigher conductivity metal may be formed over portions of the firstconductor pattern (for example the IDT bus bars and interconnectionsbetween the IDTs).

Each conductor pattern may be formed at 845 by depositing the conductorlayer and, optionally, one or more other metal layers in sequence overthe surface of the piezoelectric plate. The excess metal may then beremoved by etching through patterned photoresist. The conductor layercan be etched, for example, by plasma etching, reactive ion etching, wetchemical etching, or other etching techniques.

Alternatively, each conductor pattern may be formed at 845 using alift-off process. Photoresist may be deposited over the piezoelectricplate. and patterned to define the conductor pattern. The conductorlayer and, optionally, one or more other layers may be deposited insequence over the surface of the piezoelectric plate. The photoresistmay then be removed, which removes the excess material, leaving theconductor pattern.

At 850, one or more frequency setting dielectric layer(s) may be formedby depositing one or more layers of dielectric material on the frontside of the piezoelectric plate. For example, a dielectric layer may beformed over the shunt resonators to lower the frequencies of the shuntresonators relative to the frequencies of the series resonators. The oneor more dielectric layers may be deposited using a conventionaldeposition technique such as physical vapor deposition, atomic layerdeposition, chemical vapor deposition, or some other method. One or morelithography processes (using photomasks) may be used to limit thedeposition of the dielectric layers to selected areas of thepiezoelectric plate. For example, a mask may be used to limit adielectric layer to cover only the shunt resonators.

At 855, a passivation/tuning dielectric layer is deposited over thepiezoelectric plate and conductor patterns. The passivation/tuningdielectric layer may cover the entire surface of the filter except forpads for electrical connections to circuitry external to the filter. Insome instantiations of the process 800, the passivation/tuningdielectric layer may be formed after the cavities in the devicesubstrate are etched at either 810B or 810C.

In a second variation of the process 800, one or more cavities areformed in the back side of the device substrate at 810B. A separatecavity may be formed for each resonator in a filter device. The one ormore cavities may be formed using an anisotropic ororientation-dependent dry or wet etch to open holes through the backside of the device substrate to the piezoelectric plate. In this case,the resulting resonator devices will have a cross-section as shown inFIG. 1.

In a third variation of the process 800, one or more cavities in theform of recesses in the device substrate may be formed at 810C byetching the substrate using an etchant introduced through openings inthe piezoelectric plate. A separate cavity may be formed for eachresonator in a filter device. The one or more cavities formed at 810Cwill not penetrate through the device substrate, and the resultingresonator devices will have a cross-section as shown in FIG. 3.

Ideally, after the cavities are formed at 810B or 810C, most or all ofthe filter devices on a wafer will meet a set of performancerequirements. However, normal process tolerances will result invariations in parameters such as the thicknesses of dielectric layerformed at 850 and 855, variations in the thickness and line widths ofconductors and IDT fingers formed at 845, and variations in thethickness of the PZT plate. These variations contribute to deviations ofthe filter device performance from the set of performance requirements.

To improve the yield of filter devices meeting the performancerequirements, frequency tuning may be performed by selectively adjustingthe thickness of the passivation/tuning layer deposited over theresonators at 855. The frequency of a filter device passband can belowered by adding material to the passivation/tuning layer, and thefrequency of the filter device passband can be increased by removingmaterial to the passivation/tuning layer. Typically, the process 800 isbiased to produce filter devices with passbands that are initially lowerthan a required frequency range but can be tuned to the desiredfrequency range by removing material from the surface of thepassivation/tuning layer.

At 860, a probe card or other means may be used to make electricalconnections with the filter to allow radio frequency (RF) tests andmeasurements of filter characteristics such as input-output transferfunction. Typically, RF measurements are made on all, or a largeportion, of the filter devices fabricated simultaneously on a commonpiezoelectric plate and substrate.

At 865, global frequency tuning may be performed by removing materialfrom the surface of the passivation/tuning layer using a selectivematerial removal tool such as, for example, a scanning ion mill aspreviously described. “Global” tuning is performed with a spatialresolution equal to or larger than an individual filter device. Theobjective of global tuning is to move the passband of each filter devicetowards a desired frequency range. The test results from 860 may beprocessed to generate a global contour map indicating the amount ofmaterial to be removed as a function of two-dimensional position on thewafer. The material is then removed in accordance with the contour mapusing the selective material removal tool.

At 870, local frequency tuning may be performed in addition to, orinstead of, the global frequency tuning performed at 865. “Local”frequency tuning is performed with a spatial resolution smaller than anindividual filter device. The test results from 860 may be processed togenerate a map indicating the amount of material to be removed at eachfilter device. Local frequency tuning may require the use of a mask torestrict the size of the areas from which material is removed. Forexample, a first mask may be used to restrict tuning to only shuntresonators, and a second mask may be subsequently used to restricttuning to only series resonators (or vice versa). This would allowindependent tuning of the lower band edge (by tuning shunt resonators)and upper band edge (by tuning series resonators) of the filter devices.

After frequency tuning at 865 and/or 870, the filter device is completedat 875. Actions that may occur at 875 include forming bonding pads orsolder bumps or other means for making connection between the device andexternal circuitry (if such pads were not formed at 845); excisingindividual filter devices from a wafer containing multiple filterdevices; other packaging steps; and additional testing. After eachfilter device is completed, the process ends at 895.

FIG. 9 is a simplified flow chart showing a process 900 for making afilter incorporating XBARs. The process 900 starts at 905 with asubstrate and a plate of piezoelectric material and ends at 995 with acompleted filter. The flow chart of FIG. 9 includes only major processsteps. Various conventional process steps (e.g. surface preparation,cleaning, inspection, baking, annealing, monitoring, testing, etc.) maybe performed before, between, after, and during the steps shown in FIG.9.

The flow chart of FIG. 9 captures two variations of the process 900 formaking a filter which differ in when and how cavities are formed in thesubstrate. The cavities may be formed at steps 810B or 810C. Only one ofthese steps is performed in each of the two variations of the process900.

Process steps with reference designators from 815 to 875 are essentiallythe same as the corresponding steps of the process 800 of FIG. 8.Descriptions of these steps will not be repeated. The significantdifference between the process 900 and the process 800 is the RF tests960 and frequency tuning 965 are performed before the cavities areformed at 810B or 810C. When tuning is performed while the area of theresonators is still attached to the substrate, the substrate providesmechanical support to the piezoelectric plate and acts as a sink forheat generated as material is removed from the passivation/tuningdielectric layer. This avoids damage to the diaphragm that may occur iftuning is done after the cavities are formed, as in the process 800.

Since tuning is performed while the area of the resonators is stillattached to the substrate, the RF tests at 960 cannot measure the actualperformance parameters of a filter. Instead, the RF tests at 960 measureother parameters that can be correlated with the performance of thefilter after the cavities are formed. The RF tests at 960 may measurethe resonance frequencies of other acoustic modes that may or may notstill exist after the cavities are formed. These modes may includeSezawa modes, Rayleigh modes, and various bulk acoustic modes. Forexample, the input/output transfer functions of filter devices and/orthe admittances of individual resonators may be measured on all, or alarge portion, of the filter devices fabricated simultaneously on acommon piezoelectric plate and substrate.

The test results from 960 are processed to predict the performance ofthe filter devices which, in turn, is used to generate a contour mapindicating the amount of material to be removed as a function oftwo-dimensional position on the wafer. For example, a neutral networkmay be trained to convert the admittance of a resonator over a frequencyspan from 0 to 1 GHz into a prediction of an amount of material to beremoved at a particular location on the contour map.

At 965, the frequency of the filter devices is selectively tuned byremoving material from the surface of the passivation/tuning layer inaccordance with the contour map generated at 960. The material may beremove using a selective material removal tool such as, for example, ascanning ion mill as previously described. Global and/or local frequencytuning, as previously described, may be performed at 965. Afterfrequency tuning, the process 900 may be completed as previouslydescribed with respect to the process 800.

FIG. 10 is a simplified flow chart showing another process 1000 forfabricating a filter device incorporating XBARs. Specifically, theprocess 1000 is for fabricating a filter device with two or moredifferent piezoelectric diaphragm thicknesses. For example, a device mayhave different diaphragm thicknesses for series and shunt resonators asshown in FIG. 6B. The process 1000 starts at 1005 with a substrate and aplate of piezoelectric material disposed on a sacrificial substrate andends at 1095 with a completed filter device. The flow chart of FIG. 10includes only major process steps. Various conventional process steps(e.g. surface preparation, cleaning, inspection, baking, annealing,monitoring, testing, etc.) may be performed before, between, after, andduring the steps shown in FIG. 10.

The flow chart of FIG. 10 captures three variations of the process 1000for making an XBAR device which differ in when and how cavities areformed in the substrate. The cavities may be formed at steps 810A, 810B,or 810C. Only one of these steps is performed in each of the threevariations of the process 1000.

Process steps with reference designators from 815 to 875 are essentiallythe same as the corresponding steps of the process 800 of FIG. 8.Descriptions of these steps will not be repeated. The significantdifference between the process 1000 and the process 800 is the additionof steps 1030 and 1035.

At 1030, selected area of the piezoelectric plate are thinned. Forexample, areas of the piezoelectric plate that will become thediaphragms of series resonators may be thinned as shown in view E ofFIG. 7. The thinning may be done using a scanning material tool such asan ion mill. Alternatively, the areas to be thinned may be defined by amask and material may be removed using an ion mill, a sputter etchingtool, or a wet or dry etching process. In all cases, precise control ofthe depth of the material removed over the surface of a wafer isrequired. After thinning, the piezoelectric plate will be divided intoregions having two or more different thicknesses.

The surface remaining after material is removed from the piezoelectricplate may be damaged, particularly if an ion mill or sputter etch toolis used at 1030. Some form of post processing, such as annealing orother thermal process may be performed at 1035 to repair the damagedsurface.

After the piezoelectric plate is selectively thinned at 1030 and anysurface damage is repaired at 1035, the remaining steps of the process1000 (as shown in FIG. 10) may be the same as the corresponding steps ofthe process 800, where RF test 860 and frequency tuning 865 occur afterthe cavities are formed at 810A, 810B, or 810C. Alternatively, theremaining steps of the process 1000 (not shown in FIG. 10) may be thesame as the corresponding steps of the process 900, where RF test 960and frequency tuning 965 occur before the cavities are formed at 810B or810C. The formation of frequency setting dielectric layers at 850 is notnecessarily performed during the process 1000.

FIG. 11 is a simplified flow chart showing another process 1100 forfabricating a filter device incorporating XBARs. Specifically, theprocess 1100 is for fabricating a filter device with additional steps toimprove the thickness uniformity of the piezoelectric plate, aspreviously illustrated in FIG. 7. The flow chart of FIG. 11 includesonly major process steps. Various conventional process steps (e.g.surface preparation, cleaning, inspection, baking, annealing,monitoring, testing, etc.) may be performed before, between, after, andduring the steps shown in FIG. 11. Process steps with referencedesignators from 815 to 875 are essentially the same as thecorresponding steps of the process 800 of FIG. 8. Process steps 1030 and1035 are essentially the same as the corresponding steps of the process1000 of FIG. 10. Descriptions of these steps will not be repeated.

The flow chart of FIG. 11 captures multiple variations of the process1100 for making an XBAR which differ in when and how cavities are formedin the substrate and how the frequencies of shunt resonators are offsetfrom the frequencies of series resonators. The cavities may be formed atsteps 810B or 810C. Only one of these steps is performed in anyvariations of the process 1100. The frequencies of shunt resonators maybe offset from the frequencies of series resonators by forming afrequency setting dielectric layer over the shunt resonators at 850.Alternatively, the frequencies of shunt resonators may be offset fromthe frequencies of series resonators by thinning the piezoelectric platethat will form the diaphragms of the series resonators at 1030. One orboth of these steps is performed in any variations of the process 1100.

The primary difference between the process 1100 and the previouslydescribed processes is the addition of steps 1120 and 1125. At 1120,optical measurements of the piezoelectric plate thickness are made usingan optical thickness measurement tool such as, for example, anellipsometer/reflectometer. The optical thickness measurement tool maymeasure light reflected from the surface of the piezoelectric plate andfrom the interface between the piezoelectric plate and the substrate.The reflections from a particular measurement point on the piezoelectricplate may be measured using multiple light wavelengths, incidenceangles, and/or polarization states. The results of multiple measurementsare processed to determine the thickness of the piezoelectric plate atthe measurement point.

The measurement process is repeated to determine the thickness of thepiezoelectric plate at multiple measurement points on the surface of thepiezoelectric plate. The multiple points may, for example form a grid ormatrix of measurement points on the surface of the plate. Themeasurement data can be processed and interpolated to provide a map ofthe thickness of the piezoelectric plate.

At 1125, excess material is removed from the piezoelectric plate using amaterial removal tool, as previously shown in view C of FIG. 7. Thematerial removal tool may be, for example, a scanning ion mill or someother tool. A scanning ion mill scans a beam of high energy ions overthe surface of the piezoelectric plate. The incidence of the ion beam onthe piezoelectric plate removes material at the surface by sublimationor sputtering. The ion beam may be scanned over the surface of thepiezoelectric plate one or more times in a raster pattern. The ioncurrent or the dwell time of the ion beam may be varied during theraster scan to control the depth of material removed from each point onthe piezoelectric plate in accordance with the map of the thickness ofthe piezoelectric plate. The result is a piezoelectric plate withsubstantially improved thickness uniformity. The thickness at any pointon the piezoelectric plate may be substantially equal to a targetthickness, as previously defined.

Optionally, portions of the piezoelectric plate destined to becomediaphragms of series resonators may be thinned at 1030. Damage to theexposed surface of the piezoelectric plate incurred at 1125 and/or 1030may be removed by post processing at 1035, as previously described.

The remaining steps of the process 1100 (as shown in FIG. 11) may be thesame as the corresponding steps of the process 800, except that formingthe frequency setting dielectric layer at 850 may not be performed ifthe piezoelectric plate is selectively thinned at 1030. In either case,RF test 860 and frequency tuning 865/870 may occur after the cavitiesare formed at 810B or 810C. Alternatively, the remaining steps of theprocess 1100 (not shown in FIG. 11) may be the same as the correspondingsteps of the process 900, where RF test 960 and frequency tuning 965occur before the cavities are formed at 810B or 810C.

Closing Comments

Throughout this description, the embodiments and examples shown shouldbe considered as exemplars, rather than limitations on the apparatus andprocedures disclosed or claimed. Although many of the examples presentedherein involve specific combinations of method acts or system elements,it should be understood that those acts and those elements may becombined in other ways to accomplish the same objectives. With regard toflowcharts, additional and fewer steps may be taken, and the steps asshown may be combined or further refined to achieve the methodsdescribed herein. Acts, elements and features discussed only inconnection with one embodiment are not intended to be excluded from asimilar role in other embodiments.

As used herein, “plurality” means two or more. As used herein, a “set”of items may include one or more of such items. As used herein, whetherin the written description or the claims, the terms “comprising”,“including”, “carrying”, “having”, “containing”, “involving”, and thelike are to be understood to be open-ended, i.e., to mean including butnot limited to. Only the transitional phrases “consisting of” and“consisting essentially of”, respectively, are closed or semi-closedtransitional phrases with respect to claims. Use of ordinal terms suchas “first”, “second”, “third”, etc., in the claims to modify a claimelement does not by itself connote any priority, precedence, or order ofone claim element over another or the temporal order in which acts of amethod are performed, but are used merely as labels to distinguish oneclaim element having a certain name from another element having a samename (but for use of the ordinal term) to distinguish the claimelements. As used herein, “and/or” means that the listed items arealternatives, but the alternatives also include any combination of thelisted items.

It is claimed:
 1. A filter device, comprising: a substrate; apiezoelectric plate having a back surface attached to the substrate, thepiezoelectric plate comprising diaphragms spanning respective cavitiesin the substrate, wherein a first portion of the piezoelectric plate hasa first thickness, and a front surface of a second portion of thepiezoelectric plate is recessed relative to a front surface of the firstportion of the piezoelectric plate such that the second portion of thepiezoelectric plate has a second thickness less than the firstthickness; and a conductor pattern on the front surfaces of the firstand second portions of the piezoelectric plate, the conductor patterncomprising: a first interdigital transducer (IDT) with interleavedfingers on a diaphragm having the first thickness, and a second IDT withinterleaved fingers on a diaphragm having the second thickness.
 2. Thefilter device of claim 1, the conductor pattern further comprising: oneor more additional IDTs with interleaved fingers on respectivediaphragms having one of the first thickness and the second thickness.3. The filter device of claim 1, the conductor pattern furthercomprising: one or more additional IDTs with interleaved fingers onrespective diaphragms having thicknesses intermediate to the firstthickness and the second thickness.
 4. The filter device of claim 1,wherein the piezoelectric plate and all of the IDTs are configured suchthat a respective radio frequency signal applied to the first IDT andthe second IDT excites a respective shear primary acoustic mode withinthe respective diaphragm.
 5. The filter device of claim 4, wherein adirection of acoustic energy flow of all of the shear primary acousticmodes is substantially orthogonal to the front and back surfaces of therespective diaphragms.
 6. The filter device of claim 4, wherein thepiezoelectric plate is one of lithium niobate and lithium tantalate. 7.The filter device of claim 1, wherein the second thickness is greaterthan or equal to 200 nm, and the first thickness less than or equal to1000 nm.
 8. The filter device of claim 1, wherein the first resonator isa part of a shunt resonator and the second resonator is a part of aseries resonator in a ladder filter circuit.
 9. The filter device ofclaim 8, further comprising: one or more additional shunt resonators andone or more additional series resonators, wherein interleaved fingers ofthe IDTs of all of the shunt resonators are on respective diaphragmshaving the first thickness, and interleaved fingers of the IDTs of allof the series resonators are on respective diaphragms having the secondthickness.
 10. A method of fabricating a filter device, comprising:attaching a back surface of a piezoelectric plate having a firstthickness to a substrate; selectively forming a recess in the frontsurface of the piezoelectric plate to thin a portion of thepiezoelectric plate from the first thickness to a second thickness lessthan the first thickness; forming cavities in the substrate such thatportions of the single-crystal piezoelectric plate form a plurality ofdiaphragms spanning respective cavities; and forming a conductor patternon the front surface, the conductor pattern comprising a firstinterdigital transducer (IDT) with interleaved fingers on a firstdiaphragm having the first thickness, and a second IDT with interleavedfingers on a second diaphragm having the second thickness.
 11. Themethod of claim 10, the conductor pattern further comprising: one ormore additional IDTs with interleaved fingers on respective diaphragmshaving one of the first thickness and the second thickness.
 12. Themethod of claim 10, the conductor pattern further comprising: one ormore additional IDTs with interleaved fingers on respective diaphragmshaving thicknesses intermediate to the first thickness and the secondthickness.
 13. The method of claim 10, wherein the piezoelectric plateand all of the IDTs are configured such that a respective radiofrequency signal applied to the first IDT and the second IDT excites arespective shear primary acoustic mode within the respective diaphragm.14. The method of claim 13, wherein a direction of acoustic energy flowof all of the shear primary acoustic modes is substantially orthogonalto the front and back surfaces of the respective diaphragms.
 15. Themethod of claim 13, wherein the piezoelectric plate is one of lithiumniobate and lithium tantalate.
 16. The method of claim 10, wherein thesecond thickness is greater than or equal to 200 nm, and the firstthickness less than or equal to 1000 nm.
 17. The method of claim 10,wherein the first resonator is a part of a shunt resonator and thesecond resonator is a part of a series resonator in a ladder filtercircuit.
 18. The method of claim 17, the conductor pattern furthercomprising: IDTs of one or more additional shunt resonators and one ormore additional series resonators, wherein interleaved fingers of theIDTs of all of the shunt resonators are on respective diaphragms havingthe first thickness, and interleaved fingers of the IDTs of all of theseries resonators are on respective diaphragms having the secondthickness.